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Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
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机译:通过金属捆扎式保护环沟槽缩短到主体区域的端接设计,以缩小端接面积
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摘要
This invention discloses a semiconductor power device formed in a semiconductor substrate of a first conductivity type comprises an active cell area and a termination area surrounding the active cell area and disposed near edges of the semiconductor substrate. The termination area includes a plurality of trenches filled with a conductivity material forming a shield electrode and insulated by a dielectric layer along trench sidewalls and trench bottom surface wherein the trenches extending vertically through a body region of a second conductivity type near a top surface of the semiconductor substrate and further extending through a surface shield region of the first conductivity type. A dopant region of the second conductivity type disposed below the surface shield region extending across and surrounding a trench bottom portion of the trenches. At least a metal connector disposed above the top surface of the semiconductor substrates electrically connecting to the shield electrode of at least two trenches and shorted to the body region.
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