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Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film
Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film
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机译:半导体器件,包括在第三绝缘膜上的第二有机膜,其中第二有机膜与沟道形成区重叠以及第二导电膜
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摘要
In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
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