首页> 外国专利> Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation

Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation

机译:在具有污染物隔离的倒置变质多结太阳能电池中低温形成欧姆N接触的方法

摘要

A method of manufacturing a solar cell assembly by providing a first substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell; mounting a supporting member on top of the sequence of layers using a temporary adhesive bonding material to form a processing assembly; removing the first substrate; and depositing a contact layer including germanium and palladium on the top surface of the solar cell at a relatively low temperature so that the temporary adhesive allows the processing assembly to remain attached.
机译:一种通过提供第一基板来制造太阳能电池组件的方法;在第一衬底上沉积一系列形成太阳能电池的半导体材料层;使用临时粘合剂结合材料将支撑构件安装在层序列的顶部上以形成处理组件;去除第一基板;在相对较低的温度下在太阳能电池的顶表面上沉积包括锗和钯的接触层,以使临时粘合剂使处理组件保持附着状态。

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