FIN STRUCTURES AND METHODS OF MANFACTURING THE FIN STRUCTURES, AND FIN TRANSISTORS HAVING THE FIN STRUCTURES AND METHODS OF MANUFACTURING THE FIN TRANSISTORS

摘要

Fin structures and methods of forming the fin structure are provided. Fin structures may include a semiconductor fin that is on a silicon layer and includes a Group IV semiconductor material that includes germanium, an isolation insulation layer at two lower sides of the semiconductor fin and a bottom insulation layer under the semiconductor fin and the isolation insulation layer. The silicon layer may be a bulk silicon substrate, and the semiconductor fin may be a silicon germanium (SiGe) layer, a silicon germanium carbon (SiGeC) layer, or a single germanium (Ge) layer. The bottom insulation layer may be an oxide of a Group IV semiconductor material that includes germanium, which the semiconductor fin includes.