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Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate
Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate
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机译:通过衬底的弹性应变松弛在薄盒SOI结构中形成应变通道的方法
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摘要
Methods and structures for forming strained-channel FETs are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate below the insulator. Stress-relief cuts may be formed in the strain-inducing layer to relieve stress in the strain-inducing layer. The relief of stress can impart strain to an adjacent semiconductor layer. Strained-channel, fully-depleted SOI FETs and strained-channel finFETs may be formed from the adjacent semiconductor layer. The amount and type of strain may be controlled by etch depths and geometries of the stress-relief cuts and choice of materials for the strain-inducing layer.
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