Error detection or correction of stored signals after one or more heat events in one or more memory devices

摘要

The present disclosure includes methods, devices, and systems for error detection or correction of stored signals in memory devices. An example method includes determining whether to perform error correction operations on contents of a non-volatile memory array. Determining whether to correct can include determining whether a level of errors in pre-programmed signals in the non-volatile memory array exceeds a bit error rate threshold, where the pre-programmed signals are different from the contents of the non-volatile memory array, and performing error correction on the contents of the non-volatile memory array if the level of errors exceeds the bit error rate threshold.