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Stacked microelectronic assembly with TSVS formed in stages and carrier above chip
Stacked microelectronic assembly with TSVS formed in stages and carrier above chip
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机译:堆叠式微电子组件,具有分阶段形成的TSVS和芯片上方的载体
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摘要
A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the microelectronic element having active semiconductor devices therein. A first opening extends from an exposed surface of the first element towards the surface attached to the microelectronic element, and a second opening extends from the first opening to a first one of the conductive pads, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the microelectronic element. A conductive element extends within the first and second openings and contacts the at least one conductive pad.
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