首页>
外国专利>
Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same
Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same
Disclosed are a resistance change memory device, a method of fabricating the same, and a resistance change memory array including the same. The resistance change memory device includes a first electrode and a second electrode. A hybrid switching layer is interposed between the first electrode and the second electrode. The hybrid switching layer is a metal oxide layer having both threshold switching characteristics and memory switching characteristics.
展开▼