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Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays
Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays
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机译:用于薄膜晶体管和平板显示器金属化的铜合金阻挡层
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摘要
In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
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