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Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure
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机译:具有双栅极电介质的低成本CMOS结构及其形成方法
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摘要
Impurity atoms of a first type are implanted through a gate and a thin gate dielectric into a channel region that has substantially only the first type of impurity atoms at a middle point of the channel region to increase the average dopant concentration of the first type of impurity atoms in the channel region to adjust the threshold voltage of a transistor.
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