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Method for correcting electronic proximity effects using off-center scattering functions

机译:使用偏心散射函数校正电子邻近效应的方法

摘要

A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.
机译:一种投射电子束的方法,主要用于直接或间接书写光刻和电子显微镜。必须校正由与目标相互作用的电子束的向前和向后散射所产生的邻近效应。为此,通常使用点扩展函数与目标的几何形状的卷积。点扩展函数的至少一个分量的最大值不在光束的中心。优选地,最大值代替地位于反向散射峰上。有利地,点扩展函数使用伽马分布定律。

著录项

  • 公开/公告号US9224577B2

    专利类型

  • 公开/公告日2015-12-29

    原文格式PDF

  • 申请/专利权人 PATRICK SCHIAVONE;THIAGO FIGUEIRO;

    申请/专利号US201213587598

  • 发明设计人 THIAGO FIGUEIRO;PATRICK SCHIAVONE;

    申请日2012-08-16

  • 分类号H01J37/31;H01J37/317;H01J3/12;G03F7/20;H01J37/22;B82Y10/00;B82Y40/00;

  • 国家 US

  • 入库时间 2022-08-21 14:28:26

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