首页> 外国专利> Low-G MEMS acceleration switch

Low-G MEMS acceleration switch

机译:低G MEMS加速开关

摘要

A motion-sensitive low-G MEMS acceleration switch, which is a MEMS switch that closes at low-g acceleration (e.g., sensitive to no more than 10 Gs), is proposed. Specifically, the low-G MEMS acceleration switch has a base, a sensor wafer with one or more proofmasses, an open circuit that includes two fixed electrodes, and a contact plate. During acceleration, one or more of the proofmasses move towards the base and connects the two fixed electrodes together, resulting in a closing of the circuit that detects the acceleration. Sensitivity to low-G acceleration is achieved by proper dimensioning of the proofmasses and one or more springs used to support the proofmasses in the switch.
机译:提出了一种运动敏感的低G MEMS加速度开关,它是一种以低g加速度(例如,敏感度不超过10 Gs)闭合的MEMS开关。具体而言,低G MEMS加速度开关具有基座,具有一个或多个质量的传感器晶片,包括两个固定电极的开路以及接触板。在加速期间,一个或多个质量块朝着基座移动,并将两个固定电极连接在一起,从而导致检测加速的电路闭合。对低G加速度的敏感性是通过适当地设置质量块以及一个或多个用于支撑开关中质量块的弹簧来实现的。

著录项

  • 公开/公告号US9257247B2

    专利类型

  • 公开/公告日2016-02-09

    原文格式PDF

  • 申请/专利权人 MEGGITT (ORANGE COUNTY) INC.;

    申请/专利号US201414300109

  • 发明设计人 TOM KWA;

    申请日2014-06-09

  • 分类号H01H50/10;H01H35/14;H01H59;

  • 国家 US

  • 入库时间 2022-08-21 14:27:47

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号