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Integrated circuits with test structures including bi-directional protection diodes

机译:具有测试结构的集成电路,包括双向保护二极管

摘要

Integrated circuits that include bi-directional protection diode structures are disclosed. In one example, an integrated circuit includes a test circuit portion for testing the functionality of the integrated circuit during or after fabrication of the integrated circuit. The test circuit portion includes first, second, and third diode structures and a resistor structure. The first and third diode structures are in parallel with one another and in series with the resistor, and the resistor and the first and third diode structures are in series with the second diode structure. The first and third diode structures are configured for current flow in a first direction and the second diode structure is configured for current flow in a second direction that is opposite the first direction.
机译:公开了包括双向保护二极管结构的集成电路。在一个示例中,集成电路包括测试电路部分,该测试电路部分用于在集成电路的制造期间或之后测试集成电路的功能。测试电路部分包括第一,第二和第三二极管结构以及电阻器结构。第一和第三二极管结构彼此并联并且与电阻器串联,并且电阻器以及第一和第三二极管结构与第二二极管结构串联。第一和第三二极管结构被配置用于电流在第一方向上流动,第二二极管结构被配置用于电流在与第一方向相反的第二方向上流动。

著录项

  • 公开/公告号US9257353B1

    专利类型

  • 公开/公告日2016-02-09

    原文格式PDF

  • 申请/专利权人 GLOBALFOUNDRIES INC.;

    申请/专利号US201414523266

  • 发明设计人 RICARDO PABLO MIKALO;UWE DERSCH;

    申请日2014-10-24

  • 分类号H01L27/00;H01L21/66;H01L29/861;H01L27/02;H01L27/06;

  • 国家 US

  • 入库时间 2022-08-21 14:27:47

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