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Extremely low resistance films and methods for modifying or creating same
Extremely low resistance films and methods for modifying or creating same
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机译:极低电阻膜及其改性或制造方法
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摘要
In some implementations of the invention, existing extremely low resistance materials (ELR materials) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.
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