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EXTREMELY LOW RESISTANCE FILMS AND METHODS FOR MODIFYING OR CREATING SAME

机译:极低电阻膜及其修改或创建方法

摘要

Operational characteristics of an extremely low resistance ("ELR") film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film In some implementations of the invention, the ELR film may be in the form of a "c-film " Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium
机译:通过将改性材料沉积到ELR膜的适当表面上以形成改性的ELR膜,可以改善由ELR材料组成的极低电阻(“ ELR”)膜的操作特性。在本发明的一些实施方式中,可以将ELR膜以“ c-膜”的形式存在。这种操作特性可以包括在升高的温度下以ELR状态操作,携带额外的电荷,以改善的磁性能进行操作,以改善的机械性能或其他改善的操作特性进行操作。在本发明中,ELR材料是混合价的氧化钙钛矿,例如但不限于YBCO。在本发明的一些实施方式中,改性材料是容易与氧结合的导电材料,例如但不限于到铬

著录项

  • 公开/公告号CA2779609C

    专利类型

  • 公开/公告日2018-02-27

    原文格式PDF

  • 申请/专利权人 AMBATURE L.L.C.;

    申请/专利号CA20102779609

  • 发明设计人 GILBERT DOUGLAS J.;CALE TIMOTHY S.;

    申请日2010-10-02

  • 分类号H01L39/24;H01L39/08;

  • 国家 CA

  • 入库时间 2022-08-21 12:48:16

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