Pixel of a cmos imager of an optical detector

摘要

The invention relates to a pixel of a CMOS imager, the pixel comprising: an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers, a conversion circuit able to receive electrons and deliver a voltage with a value varying as a function of the number of received electrons, and a first switch connected between the infrared photodiode and the conversion circuit.