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SYNTHESIS OF GE NANOWIRES ENCAPSULATED WITHIN MULTI WALLED CARBON NANOTUBES BY CVD
SYNTHESIS OF GE NANOWIRES ENCAPSULATED WITHIN MULTI WALLED CARBON NANOTUBES BY CVD
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机译:CVD法合成多壁碳纳米管包裹的GE纳米线
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摘要
Abstract The present invention relates to single-step synthesis of Ge nanowires encapsulated within multi-walled carbon nanotubes from a phenyltrimethylgermane (C6H5Ge(CH3)3) precursor, using a simple CVD method. Referring to Fig (1) two-zone furnace employed for the CVD preparation for the growth of pristine carbon MWNTs, and consisted of a quartz tube reactor and a flat quartz slide inserted at the reaction zone for additional deposition surface. Synthesized nanowires are largely free from amorphous forms of carbon and possess large aspect ratios, the typical length being in the order of 10 By optimizing the CVD parameters, nanowires can be produced with uniform length and diameter in the range 6-10 and 200-300 nm, respectively.
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机译:摘要本发明涉及使用简单的CVD方法从苯基三甲基锗烷(C 6 H 5 Ge(CH 3)3)前体一步合成囊封在多壁碳纳米管中的Ge纳米线。参见图(1),该两区炉用于CVD制备原始碳MWNT的生长,由石英管反应器和插入反应区的平板石英载玻片组成,用于额外的沉积表面。合成的纳米线基本上不含无定形形式的碳,并且具有较大的长宽比,典型长度约为10。通过优化CVD参数,可以生产长度和直径均匀的纳米线,范围在6-10和200-300之间纳米。
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