PHYSICALLY UNCLONABLE FUNCTION BASED ON PROGRAMMING VOLTAGE OF MAGNETORESISTIVE RANDOM-ACCESS MEMORY

摘要

One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random access memory (MRAM) cells to a first logical state where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state where the programming signal voltage is greater than the first voltage and less than the second voltage.