Error free physically unclonable function with programmed resistive random access memory using reliable resistance states by specific identification-generation method

摘要

A high performance physically unclonable function (PUF) implemented with WO3 resistive random access memory (ReRAM) is presented in this paper. This robust ReRAM-PUF can eliminated bit flipping problem at very high temperature (up to 250 degrees C) due to plentiful read margin by using initial resistance state and set resistance state. It is also promised 10 years retention at the temperature range of 210 degrees C. These two stable resistance states enable stable operation at automotive environments from -40 to 125 degrees C without need of temperature compensation circuit. The high uniqueness of PUF can be achieved by implementing a proposed identification (ID)-generation method. Optimized forming condition can move 50% of the cells to low resistance state and the remaining 50% remain at initial high resistance state. The inter- and intra-PUF evaluations with unlimited separation of hamming distance (HD) are successfully demonstrated even under the corner condition. The number of reproduction was measured to exceed 10(7) times with 0% bit error rate (BER) at read voltage from 0.4 to 0.7V. (c) 2018 The Japan Society of Applied Physics.