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BORON, BISMUTH CO-DOPING OF GALLIUM ARSENIDE AND OTHER COMPOUNDS FOR PHOTONIC AND HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
BORON, BISMUTH CO-DOPING OF GALLIUM ARSENIDE AND OTHER COMPOUNDS FOR PHOTONIC AND HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
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机译:光子和异质结双极晶体管器件的砷化镓和其他化合物的硼,铋的共掺杂
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摘要
Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
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