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METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS

机译:一种集成电路制造过程的指标计算方法

摘要

The invention discloses a method for calculating the parameters of a resist model of an IC manufacturing process. According to an embodiment of the method of the invention, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. Advantageously, the deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.
机译:本发明公开了一种计算集成电路制造工艺中抗蚀剂模型参数的方法。根据本发明的方法的实施例,代表目标设计的函数在整个目标设计中卷积,其中核函数与具有移位角的变形函数复合。有利地,变形函数被其傅立叶级数展开所代替,其阶数被选择为使得卷积乘积通过在将应用于目标设计的校正公差内的旋转而不变。可替代地,可以将卷积积分解为选择的基本内核函数,这些基本内核函数根据所确定的角度而变化,从而可以将用于移位角的值的变形函数投影到一对基本内核函数上,这些基本内核函数的角度与移位角最接近。

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