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MULTI-PORT SRAM CIRCUIT WITH FIRST AND SECOND WORD LINE
MULTI-PORT SRAM CIRCUIT WITH FIRST AND SECOND WORD LINE
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机译:具有第一和第二字线的多端口SRAM电路
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摘要
A multi-port hybrid full-swing/low-swing memory circuit in a static random access memory (SRAM) device comprises a first wordline driver that comprises a read wordline driver, a second wordline driver that comprises either a read wordline driver or a read/write wordline driver, a memory cell coupled to the first and second wordline drivers, a sense amplifier coupled to the memory cell, and a latch coupled to the memory cell. The memory circuit is capable of achieving high-speed low-swing or low-speed full-swing operations while avoiding the need for a large circuit area on an integrated circuit.
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