PROCESSING COMPONENT HAVING IMPROVED PLASMA ETCH RESISTANCE, AND TREATMENT METHOD FOR REINFORCING PLASMA ETCH RESISTANCE OF PROCESSING COMPONENT

摘要

The present invention is for solving the problem of processing components of semiconductor or display manufacturing equipment being exposed to plasma and etched, and the present invention relates to a method for improving plasma etch resistance and a processing component having improved plasma etch resistance by means of the method, wherein valleys and peaks of a processing component surface (the surface of the main body of the processing component and the surface of a coating film) before and after ceramic powder coating are removed. The present invention provides "a processing component, which is a processing component of semiconductor or display manufacturing equipment that is exposed to plasma, having a coating film formed on the surface of the main body thereof having a portion or all of the valleys and peaks removed therefrom, and having improved plasma etch resistance characterized by removing a portion or all of the valleys and peaks from the coating film surface".