首页>
外国专利>
PROCESSING COMPONENT HAVING IMPROVED PLASMA ETCHING RESISTANCE, AND TREATMENT METHOD FOR REINFORCING PLASMA ETCHING RESISTANCE OF PROCESSING COMPONENT
PROCESSING COMPONENT HAVING IMPROVED PLASMA ETCHING RESISTANCE, AND TREATMENT METHOD FOR REINFORCING PLASMA ETCHING RESISTANCE OF PROCESSING COMPONENT
展开▼
机译:具有改善的等离子体耐蚀性的处理部件以及用于增强处理部件的耐等离子体蚀性的处理方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided is a processing component of equipment for manufacturing a semiconductor or a display. A ceramic coated film is formed on a surface of a body of the processing component, in a state in which some or the entirety of valleys and peaks are removed, such that a surface roughness Rz, which is expressed as an absolute value (P1+P2+P3+P4+P5)/5−(V1+V2+V3+V4+V5)/5 corresponding to a difference between an average of distances between the deepest five valleys V1, V2, V3, V4 and V5 in a section in which the surface roughness is measured and an arbitrary datum line that is parallel to a center line at which an area of peaks and an area of valleys are equal to each other in the section in which the surface roughness is measured and an average of distances between the highest five peaks P1, P2, P3, P4 and P5 in the section in which the surface roughness is measured and the arbitrary datum line, is lower than 5.0 μm.
展开▼
机译:提供了用于制造半导体或显示器的设备的处理部件。在去除部分或全部谷值和峰的状态下,在处理部件的主体的表面上形成陶瓷涂膜,使得表面粗糙度Rz表示为绝对值(P < B> 1 + B> P 2 + B> P 3 + B> P 4 + B> P 5 B>)/ 5 −(V 1 + B> V 2 + B> V 3 + B> V 4 + B> V 5 B >)/ 5,对应于最深的五个谷之间的平均距离V 1, B> V 2, B> V 3, B> V < B> 4 B>和V 5 B>,在其中测量表面粗糙度的部分以及与基准线平行的任意基准线,在该基准线处,峰的面积和谷的面积在测量表面粗糙度的部分和最高的五个峰值P 1, B> P 2, B> P 3之间的距离的平均值之间彼此相等, B> P 4 B>和P 5 B>在测量表面粗糙度和任意基准线的部分中均小于5.0μm。
展开▼