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PIXEL STRUCTURE FOR IMPROVING BAD DETECTION RATE, AND DETECTION METHOD

机译:改善不良检测率的像素结构及检测方法

摘要

A pixel structure for improving a bad detection rate, and a detection method. The pixel structure for improving a bad detection rate comprises two regions, i.e. a primary pixel (10) and a secondary pixel (20), wherein there are a charge sharing thin film transistor (T3) and a charge sharing capacitor (CST3) in the secondary pixel (20); a gate electrode of the charge sharing thin film transistor (T3) is electrically connected to a charge sharing scanning line (Gate2(m)); the charge sharing capacitor (CST3) is constituted by an ITO layer upper electrode plate (42), a metal layer lower electrode plate (2) and an insulation layer (3) which is clamped between the ITO layer upper electrode plate (42) and the metal layer lower electrode plate (2); and the ITO layer upper electrode plate (42) and an ITO pixel electrode (41) are located on the same layer, and the ITO layer upper electrode plate (42) serves as a common pixel electrode and is connected to a common voltage signal line (Com(m)), and the metal layer lower electrode plate (2) is connected to a drain electrode of the charge sharing transistor (T3).
机译:用于改善不良检测率的像素结构和检测方法。用于提高不良检测率的像素结构包括两个区域,即主像素(10)和次级像素(20),其中存在电荷共享薄膜晶体管(T3)和电荷共享电容器(C 次像素(20)中的ST3 );电荷共享薄膜晶体管(T3)的栅电极与电荷共享扫描线(Gate2(m))电连接。电荷共享电容器(C ST3 )由ITO层上电极板(42),金属层下电极板(2)和夹在ITO之间的绝缘层(3)构成层上电极板(42)和金属层下电极板(2); ITO层上电极板(42)和ITO像素电极(41)位于同一层上,ITO层上电极板(42)作为公共像素电极并与公共电压信号线连接。 (Com(m)),金属层下部电极板(2)与电荷共享晶体管(T3)的漏极连接。

著录项

  • 公开/公告号WO2016078230A1

    专利类型

  • 公开/公告日2016-05-26

    原文格式PDF

  • 申请/专利号WO2015CN72367

  • 发明设计人 WANG ZUI;

    申请日2015-02-06

  • 分类号G02F1/1343;G02F1/13;

  • 国家 WO

  • 入库时间 2022-08-21 14:17:48

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