首页> 外国专利> PIXEL STRUCTURE AND DETECTION METHOD OF PROMOTING DEFECT DETECTION RATE

PIXEL STRUCTURE AND DETECTION METHOD OF PROMOTING DEFECT DETECTION RATE

机译:提高缺陷检测率的像素结构和检测方法

摘要

The present invention provides a pixel structure and a detection method of promoting defect detection rate. The pixel structure of promoting defect detection rate comprises two areas of a main pixel (10) and a sub pixel (20), and the sub pixel (20) comprises a charge sharing thin film transistor (T3) and a charge sharing capacitor (CST3); a gate of the charge sharing thin film transistor (T3) is electrically coupled to a charge sharing scan line (Gate2(m)); the charge sharing capacitor (CST3) is constructed by an ITO layer upper electrode plate (42), a metal lower electrode plate (2) and an insulative layer (3) sandwiched between the ITO layer upper electrode plate (42) and the metal lower electrode plate (2); the ITO layer upper electrode plate (42) and an ITO pixel electrode (41) are in a same layer, and the ITO layer upper electrode plate (42) is employed as a pixel common electrode coupled to a common voltage signal line (Com(m)), and the metal lower electrode plate (2) is coupled to a drain of the charge sharing thin film transistor (T3).
机译:本发明提供了一种提高缺陷检测率的像素结构和检测方法。提高缺陷检测率的像素结构包括两个区域:主像素( 10 )和子像素( 20 ),以及子像素( 20 < / B>)包括电荷共享薄膜晶体管(T 3 )和电荷共享电容器(C ST3 );电荷共享薄膜晶体管(T 3 )的栅极电耦合至电荷共享扫描线(Gate 2 m )) ;电荷共享电容器(C ST3 )由ITO层上电极板( 42 ),金属下电极板( 2 )构成绝缘层( 3 )夹在ITO层上电极板( 42 )和金属下电极板( 2 )之间; ITO层上电极板( 42 )和ITO像素电极( 41 )在同一层中,而ITO层上电极板( 42 < / B>)作为耦合到公共电压信号线(Com(m))的像素公共电极,金属下电极板( 2 )耦合到电荷共享的漏极薄膜晶体管(T 3 )。

著录项

  • 公开/公告号US2016342051A1

    专利类型

  • 公开/公告日2016-11-24

    原文格式PDF

  • 申请/专利号US201514423431

  • 发明设计人 ZUI WANG;

    申请日2015-02-06

  • 分类号G02F1/1362;G02F1/1343;G02F1/1368;G02F1/1333;

  • 国家 US

  • 入库时间 2022-08-21 13:46:53

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号