METHOD FOR FORMING P-TYPE SEMICONDUCTOR THIN FILM STRUCTURE AND METHOD FOR MANUFACTURING P-TYPE OHMIC ELECTRODE USING SAME

摘要

In a method for forming a p-type semiconductor thin film structure, a substrate, of which a semi-polar or non-polar plane is exposed, is prepared. A first semiconductor thin film having a first surface roughness is formed on the plane by supplying a group III metal source and a nitrogen source having a first flow rate at a first temperature. Then, a second semiconductor thin film, having a second surface roughness greater than the first surface roughness, is formed on the first semiconductor thin film by supplying the group III metal source and a nitrogen source having a second flow rate less than the first flow rate.