LOCAL-AREA CARBON SUPPLY DEVICE AND METHOD FOR PREPARING WAFER-LEVEL GRAPHENE MONOCRYSTALLINE BASED ON LOCAL-AREA CARBON SUPPLY

摘要

A local-area carbon supply device and a method for preparing wafer-level graphene monocrystallines based on local-area carbon supply, which method comprises providing a local-area carbon supply device; preparing a nickel-copper alloy substrate, and placing the nickel-copper alloy substrate in the local-area carbon supply device; and arranging the local-area carbon supply device where the nickel-copper alloy substrate is placed in a cavity of a chemical vapour deposition system, introducing a gaseous carbon source into the local-area carbon supply device so that the graphene monocrystallines are grown on the nickel-copper alloy substrate. The prepared graphene crystalline domain is high in crystallinity, the preparing condition is simple, and the costs are low; the window of the condition parameters required by growth is narrow, and the repeatability is high; and a foundation is laid for wide application of the wafer-level graphene monocrystallines in fields such as graphene devices. As a result, the various defects in the prior art are overcome and the local-area carbon supply device and the method for preparing wafer-level graphene monocrystallines based on local-area carbon supply effectively have high industrial utilization value.