首页> 外国专利> METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN MAGNETIC JUNCTION USABLE IN SPIN TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS

METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN MAGNETIC JUNCTION USABLE IN SPIN TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS

机译:在自旋转矩传递磁随机存取存储器中应用的通过磁结中的离子扩散控制磁性能的方法

摘要

The present invention relates to a method for providing a magnetic junction on a substrate usable in a magnetic device. The method includes: providing a reference layer; providing a nonmagnetic spacer layer; and providing a free layer. The nonmagnetic spacer layer is between the free layer and the reference layer, and an interface is between the nonmagnetic spacer layer and the free layer. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature higher than an operation temperature of a magnetic junction; the electric field applies force to negative ions within the free layer in the direction away from the interface between the free layer and the nonmagnetic spacer layer; and the magnetic junction is comprised to be switched between a plurality of stable magnetic states when a write current flows by passing through the magnetic junction.;COPYRIGHT KIPO 2016
机译:本发明涉及一种用于在可用于磁性装置中的基板上提供磁性结的方法。该方法包括:提供参考层;以及提供非磁性间隔层;并提供一个自由层。非磁性间隔层在自由层和参考层之间,并且界面在非磁性间隔层和自由层之间。提供自由层还包括在自由层处于高于磁性结的工作温度的局部温度时施加至少一个电场。电场在远离自由层和非磁性间隔层之间的界面的方向上向自由层内的负离子施加力。并且当通过磁结流过写入电流时,该磁结被构造为在多个稳定的磁状态之间切换。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20150129625A

    专利类型

  • 公开/公告日2015-11-20

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20150065870

  • 发明设计人 CHEPULSKYY ROMANUA;APALKOV DMYTROUS;

    申请日2015-05-12

  • 分类号H01L43/02;H01L43/08;

  • 国家 KR

  • 入库时间 2022-08-21 14:15:51

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