ESD PROTECTED CIRCUIT WITH MIGFET AND METHOD IN ESD PROTECTED CIRCUIT

摘要

electrostatic discharge (ESD) protection circuit 30 is connected to the supply voltage rails (VDD, VSS), multiple independent gate field effect transistor (MIGFET) (32, 34, 36, 38), the pre-driver and a (pre-driver) (60, 62) and the hot-gate bias circuit (hot gate bias circuit) (40, 42). MIGFET output pads (44, 46) connected between the supply voltage rail and the source / drain path, having a first gate terminal and second gate terminal. The pre-driver circuit has an output. Hot gate bias circuit and is connected to the first gate terminal (68) of MIGFET (34), the pre-output of the driver circuit 60 is connected to the second gate terminal (64) of MIGFET. Hot gate bias circuit 40 is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event which increases the breakdown voltage (breakdown voltage) of the MIGFET to withstand ESD events better.