METHOD AND APPARATUS FOR RF COMPENSATION IN PLASMA ASSISTED ATOMIC LAYER DEPOSITION

摘要

Embodiments herein relate to methods, apparatus, and systems for depositing a film on substrates. In these embodiments, substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. Disclosed herein are methods and apparatus for minimizing the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.