IMPROVED CLADDING LAYER EPITAXY VIA TEMPLATE ENGINEERING FOR HETEROGENEOUS INTEGRATION ON SILICON

摘要

A semiconductor body-semiconductor body comprising junction regions disposed on opposite sides of a channel region and a channel region, the semiconductor body-semiconductor body comprising: a first material comprising a first band gap; And a second material comprising a second material having a second bandgap different from the first bandgap, the plurality of nanowires comprising a plurality of nanowires, the plurality of nanowires comprising a first material, Disposed in planes that have been removed; And a gate stack disposed over the channel region. Forming a plurality of nanowires in a separate plane on the substrate, each of the plurality of nanowires including a material comprising a first band gap; Separately forming a cladding material around each of the plurality of nanowires, the cladding material including a second band gap; Joining the cladding material; And disposing a gate stack on the cladding material.