首页> 外国专利> ETCHANT COMPOSITION FOR MOLYBDENUM ALLOY LAYER AND INDIUM OXIDE LAYER AND MANUFACTURING METHOD OF ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE USING ETCHANT COMPOSITION

ETCHANT COMPOSITION FOR MOLYBDENUM ALLOY LAYER AND INDIUM OXIDE LAYER AND MANUFACTURING METHOD OF ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE USING ETCHANT COMPOSITION

机译:钼合金层和氧化铟层的粘结剂组成及使用该粘结剂组成的液晶显示装置的阵列基质的制备方法

摘要

The present invention relates to an etchant composition for a molybdenum alloy layer, an indium oxide layer, or a multilayer of the molybdenum alloy layer and the indium oxide layer; and a manufacturing method of an array substrate for a liquid crystal display device using the etchant composition. Based on the total weight of the composition, the etchant composition comprises: A) 5 to 25 wt% of hydrogen peroxide (H_2O_2); B) 0.1 to 2 wt% of a fluorine containing compound; C) 0.5 to 5 wt% of a gamma-butyrolactone derivative containing a hydroxyl group; D) 0.01 to 5 wt% of a sulfone-based compound; E) 1 to 3 wt% of an anticorrosive agent; and F) the remainder of water. The etchant composition of the present invention has excellent etching speed on a molybdenum alloy layer and an indium oxide layer without attacking a copper-based metal layer located below.;COPYRIGHT KIPO 2016
机译:本发明涉及一种用于钼合金层,氧化铟层或钼合金层和氧化铟层的多层的蚀刻剂组合物。以及使用该蚀刻剂组合物的液晶显示装置的阵列基板的制造方法。基于所述组合物的总重量,所述蚀刻剂组合物包含:A)5至25重量%的过氧化氢(H_2O_2); B)0.1至2wt%的含氟化合物; C)0.5至5%(重量)的含羟基的γ-丁内酯衍生物; D)0.01至5wt%的砜基化合物; E)1-3%(重量)的防腐剂; F)其余的水。本发明的蚀刻剂组合物在钼合金层和氧化铟层上具有优异的蚀刻速度,而不会侵蚀位于其下方的铜基金属层。COPYRIGHTKIPO 2016

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