RESTRICTIVE RANDOM ACCESS MEMORY ARRAY USING MULTIPLE RESET VOLTAGES AND METHOD FOR RESETTING RESTRICTIVE RANDOM ACCESS MEMORY ARRAY USING MULTIPLE RESET VOLTAGES

摘要

According to an embodiment, provided is a method for reset operation for a resistive random access memory (RRAM) array, having a first RRAM connected to a first word line and a second RRAM connected to a second word line. A first electrical resistance between the first word line and a word line voltage source is lower than a second electrical resistance between the second word line and the word line voltage source. The method comprises the steps of: providing a first voltage by using a word line voltage source for resetting a first RRAM; and providing a second voltage by using the word line voltage source for resetting a second RRAM, wherein the first voltage for resetting the first RRAM is lower than the second voltage for resetting the second RRAM.;COPYRIGHT KIPO 2016