-K LOW-K DIELECTRIC LAYER WITH REDUCED DIELECTRIC CONSTANT AND STRENGTHENED MECHANICAL PROPERTIES

摘要

Embodiments of the present invention generally provide a method and apparatus for forming a low-k dielectric porous silicon oxy-carbon layer in an integrated circuit. In one embodiment, a method for selectively removing porogens from the formed layer, followed by depositing the porogen and bulk layer containing silicon oxy-carbon layer and not simultaneously bridging the bulk layer, followed by a method for crosslinking the bulk layer material / RTI In other embodiments, a plurality of silicon oxycarbon sub-layers may be deposited and the porogenes may be selectively removed from each sub-layer, without bridging the bulk material of the sub-layer simultaneously, Are provided.;