SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEALING ANNEALED SUBSTRATE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A semiconductor substrate for a flash lamp anneal used in a manufacturing process for forming a pn junction on the surface of a semiconductor substrate by ion implantation and restoring ion implantation defects by flash lamp annealing, wherein the semiconductor substrate has a carbon concentration of 0.5 RTI ID = 0.0 ppma. /RTI Thereby, a semiconductor substrate for a flash lamp annealing is provided which can easily and reliably prevent the residual of ion implantation defects in a device using a flash lamp annealing process.;