Methods of forming dual damascene metal interconnect structures using multi-hard masks

摘要

provides a method of manufacturing a metal wiring structure of the present invention, a dual damascene. Method of manufacturing a metal wiring structure of a dual damascene of the present invention is to form a hard mask layer including a laminated structure of at least four insulating material layer on an insulating film on an integrated circuit substrate, and the insulating film, the hard mask layer is at least first and second insulating defined as first and second layer of insulating material, each comprising a material, at least a third and a fourth insulating material on the third and fourth layer of insulating material each of which includes, spaced from each other trench, and including the via pattern, and comprises selectively etching the insulating film along the shape of the trench and the via pattern the hard mask layer as an etch mask. ;