- NON-VOLATILE SRAM CELL THAT INCORPORATES PHASE-CHANGE MEMORY INTO A CMOS PROCESS

摘要

two cross formed by the CMOS technology, - the first and second elements kalko genik SRAM cell and integrated in order to add a non-volatile characteristic to the SRAM cell and the storage cells having a coupled inverters. PCM resistance is programmed to the SET state and the RESET state, SRAM cell while the power is on and brings the data contained within the PCM cell.