首页> 外国专利> Precharge method of semiconductor memory device for contorlling precharge starting time of each bank at bank precharge operation and semiconductor memory device using it

Precharge method of semiconductor memory device for contorlling precharge starting time of each bank at bank precharge operation and semiconductor memory device using it

机译:用于在存储体预充电操作中控制每个存储体的预充电开始时间的半导体存储装置的预充电方法以及使用该方法的半导体存储装置

摘要

The present invention discloses a semiconductor memory device having the pre-charging method of the semiconductor memory device and a method that can adjust the operation time of each bank-specific precharge when the bank precharge operation. The semiconductor memory device of the present invention the pre-charge operation time for each bank based on the bank by activating or light sequence latch when the pre-charge operation for latching the sequence performing the activation or write operation for each bank, and a plurality of banks by adjusting the differently, to start a plurality of banks at different times, the pre-charge operation. Therefore, the power supply noise can be reduced, it is possible to perform a stable pre-charge operation.
机译:本发明公开了一种具有半导体存储装置的预充电方法的半导体存储装置,以及一种在存储体预充电操作时能够调整各存储体特定预充电的操作时间的方法。本发明的半导体存储器件在用于锁存执行每个存储体的激活或写入操作的序列的预充电操作时,通过激活或点亮序列锁存器来基于存储体对每个存储体的预充电操作时间,以及多个通过不同地调节电池组,以在不同时间启动多个电池组的预充电操作。因此,可以减小电源噪声,可以执行稳定的预充电操作。

著录项

  • 公开/公告号KR101633399B1

    专利类型

  • 公开/公告日2016-06-27

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20090036571

  • 发明设计人 주용규;정우표;

    申请日2009-04-27

  • 分类号G11C11/4074;G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 14:12:20

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