Control method for domain wall of magnetic structure and using the magnetic memory device

摘要

the magnetization of the invention is a plurality of magnetic domains and the magnetic domain in the magnetic structure with the magnetic domain wall provided between said magnetic domains parallel to the magnetization direction of the wall in one direction by the first magnetic field and the magnetic domain wherein a first step of applying a second magnetic field in a direction parallel to the second direction; And a second step of applying a third magnetic field and the fourth magnetic field in a direction opposite to the second direction in a direction opposite to the first direction to the magnetic structure; by performing, including, the magnetic domain magnetic domain wherein the wall magnetization direction of the wall or and to uniformly move to the magnetization direction and the parallel direction of the magnetic domain wherein the plurality of magnetic domains and the magnetic structure with the magnetic domain wall provided between the magnetic domains, the magnetic domains parallel to the magnetization direction and the magnetization direction of the magnetic domain walls and each a first step of applying a non-magnetic field; Uniformly move to the magnetization direction and the parallel direction of the by performing, including, the magnetic domain magnetic domain wherein the walls of the wall magnetization direction or the magnetic domain above; and a second step of applying a further magnetic field in the reverse direction of the magnetic field direction in the magnetic structure magnetic domain wall of the magnetic structure, control method, and which can provide a magnetic memory device comprising the magnetic structure according to the control method. ;