首页> 外国专利> Memory Devices Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls And Methods Of Forming A Memory Device Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls

Memory Devices Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls And Methods Of Forming A Memory Device Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls

机译:包括分别包含多个具有畴壁的磁畴的磁道的存储设备和形成包括单独包含多个具有畴壁的磁畴的磁道的存储设备的方法

摘要

A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.
机译:一种形成具有分别包括具有畴壁的多个磁畴的磁道的存储器件的方法,包括形成具有均匀化学组成的高度外部基板材料。均质组合物材料被部分蚀刻以在均质组合物材料中形成高程凹陷和高程凸起的交替区域。在交变区域上方并相对于交变区域形成多个磁道。紧邻区域的界面分别在各个磁道中形成畴壁钉扎点。公开了其他方法,包括独立于方法的存储器件。

著录项

  • 公开/公告号US2015235713A1

    专利类型

  • 公开/公告日2015-08-20

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201514701870

  • 发明设计人 LIVIO BALDI;MARCELLO MARIANI;

    申请日2015-05-01

  • 分类号G11C19/08;H01L43/12;H01L43/02;

  • 国家 US

  • 入库时间 2022-08-21 15:27:04

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