- Structure and method for forming a shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein

摘要

A shielded gate trench field effect transistor (FET) comprises trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench. The shield electrode is insulated from the semiconductor region by a shield dielectric. A gate electrode is disposed in each trench over the shield electrode, and an inter-electrode dielectric (IED) comprising a low-k dielectric extends between the shield electrode and the gate electrode.