LOW RESISTIVITY SIC CERAMICS MATERIALS USING PRESSURELESS SINTERING AND MANUFACTURING METHOD

摘要

The present invention relates to a silicon carbide ceramic material manufactured using an atmospheric sintering process; and to a manufacturing method thereof. The silicon carbide ceramic material is dense, has excellent corrosion resistance and chemical resistance against plasma, has good thermal conductivity and low thermal expansion coefficient, and thus can hardly be damaged even when used for a long period of time. Furthermore, the silicon carbide ceramic material has low resistivity, and thus can inhibit the occurrence of arc under plasma atmosphere in an etching apparatus. The silicon carbide ceramic material can be manufactured at low costs, is economical, and can be applied to a jig of a semiconductor apparatus. According to the present invention, provided is a manufacturing method of a silicon carbide ceramic material using an atmospheric sintering process, which comprises: a base material preparation step of mixing alpha silicon carbide (-SiC) powder or beta silicon carbide (-SiC) powder and a liquid sintering aid in a predetermined ratio to prepare base material powder; a slurry step of making the base material powder prepared in the base material preparation step into slurry; a drying and granulation step of drying the base material powder made into slurry in the slurry step, and granulating the base material powder; a molding step of molding the base material powder granulated in the drying and granulation step in a predetermined shape; a degreasing step of vacuum-degreasing a molded material obtained in the molding step: and a sintering step of sintering the molded material obtained via the degreasing step.