首页> 外国专利> COMPOSITION FOR PRESSURELESS SINTERED SILICON CARBIDE MATERIAL HAVING LOW-RESISTIVITY, SINTERED BODY AND THE PRODUCING METHOD OF THE SAME

COMPOSITION FOR PRESSURELESS SINTERED SILICON CARBIDE MATERIAL HAVING LOW-RESISTIVITY, SINTERED BODY AND THE PRODUCING METHOD OF THE SAME

机译:具有低电阻率的无压烧结碳化硅材料的组成,烧结体及其制造方法

摘要

The present invention relates to a composition for producing a bulk silicon carbide material, wherein the composition is produced through a non-pressure sintering scheme; a silicon carbide material; and a method for producing the same. The composition has a density range of 3.10-3.45 g/cm^3, has low resistance in a range of 510^(-3)-910^(-1) cm at a constant temperature, simultaneously represents a hardness range of 24-30 GPa, and is made of silicon carbide particles in which fine tissue has a core/shell structure. More specifically, provided are a composition for producing a silicon carbide ceramic material, a non-pressure sintering silicon carbide bulk ceramic material produced by using the same, and a method for producing the same. The composition comprises (1) micron -SiC powder added as a seed particle for promoting particle growth in sub-micron -SiC powder, (2) one or more materials selected among nitrides of Al and Ti which simultaneously serve as materials for producing a nitrogen source and a liquid as sintering additives, and (3) one or more materials selected among oxides of Y, Al, and Ca which are added to produce a liquid and to reduce a sintering temperature. The non-pressure sintering silicon carbide bulk ceramic material has a very low volume specific resistance range of 510^(-3)-910^(-1) cm at a constant temperature, simultaneously has a hardness range of 24-30 GPa at a room temperature, and is made of silicon carbide particles in which fine tissue has a core/shell structure.
机译:本发明涉及用于生产块状碳化硅材料的组合物,其中该组合物是通过非压力烧结方案生产的。碳化硅材料;及其制造方法。该组合物的密度范围为3.10-3.45 g / cm ^ 3,在恒定温度下具有在510 ^(-3)-910 ^(-1)cm范围内的低电阻,同时表示24的硬度范围30 GPa,由碳化硅颗粒制成,其中细组织具有核/壳结构。更具体地,提供了用于生产碳化硅陶瓷材料的组合物,通过使用该组合物生产的非压力烧结的碳化硅块状陶瓷材料及其制造方法。该组合物包括(1)作为种子颗粒添加的微米-SiC粉末,以促进亚微米-SiC粉末中的颗粒生长;(2)选自Al和Ti的氮化物的一种或多种材料,其同时用作产生氮的材料。 (3)从Y,Al和Ca的氧化物中选择的一种或多种材料被添加以产生液体并降低烧结温度,所述材料是作为烧结添加剂的原料和液体。非压力烧结碳化硅块状陶瓷材料在恒定温度下的体积电阻率非常低,为510 ^(-3)-910 ^(-1)cm,在室温下的硬度范围为24-30 GPa。由碳化硅颗粒制成,其中细组织具有核/壳结构。

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