A method for determining of the storage state of a resistive multi - level - memory cell, a process for the programming of a storage state of a resistive memory cell, a device for measuring of the storage state of a resistive m - l - memory cell

摘要

A method for determining of the storage state of a resistive multi - level - memory cell,• whereby the memory cell, a first electrode, a second electrode, as well as a between the first electrode and the second electrode arranged active material, said method comprises the following processes:• Charging or discharging a reading capacity of the memory cell, in that between the first and second electrodes of a voltage is generated,• Determination of the storage state of the memory cell based on a change in the voltage during the charging or discharging of the read capacitance,• wherein the determination of the memory state is effected by the voltage applied to the second electrode is scanned at different sampling instants and correspondingly determined voltage - sampling values are compared with at least one reference voltage.