A method for determining a storage state of a resistive memory cell as well as a device for measuring of the storage state of a resistive memory cell

摘要

A method for determining the measurement of the storage state of a resistive memory cell, the memory cell, a first electrode, a second electrode, as well as a between the first electrode and the second electrode arranged active material, has the following processes: charging or discharging a reading capacity of the memory cell, in that between the first and second electrodes of a voltage is generated, and determining the storage state of the memory cell, based on a change in the voltage during the charging or discharging of the read capacitance.