A method for the production of a substrate for at least one power semiconductor component, a method for the production of a power semiconductor module and power semiconductor module

摘要

A method for the production of a substrate (7, 7 ‘, 7 ‘ ‘) for at least one power semiconductor component (10a, 10b) with the following process steps:a) providing an electrically nonconductive insulating material body (1),b) applying a structured first metal layer (2a) on the first side (15a) of the insulating material body (1) and applying a second metallization layer (2b) on one of the first side (15a) of the insulating material body (1), which are arranged lying opposite the second side (16b) of the insulating material body (1),c) applying a not electrically conductive lacquer layer (3) on the second metallization layer (2b), wherein the lacquer layer (3) has recesses (13),d) a galvanic deposition of a first metal layer (5) on the first metallization layer (2a), together with a galvanic deposition of elevations (6, 6 ‘) on the second metallization layer (2b) at the locations at which the lacquer layer (3) has recesses (13).