A method for producing a graph - or carbon nanotubes, - - unit with localized lower the gates and gate - dielectric

摘要

A method for producing a transistor - unit which includes the steps of:Providing a wafer with a layer of an electrically conductive material on an insulating layer;Formation of cavities in the wafer, one or more components of the conductive material is to be insulated, wherein an insulated proportion of conductive material as a local lower gate of the unit serves;Filling the cavities with a dielectric;Forming a gate - dielectric to the lower gate;Forming a nanostructure - material on the basis of carbon over at least a proportion of the gate - dielectric, wherein a portion of the nanostructure - material on the basis of carbon as a channel of the unit; andForming conductive source - and the drain - contacts on one or more portions of the nanostructure - material on the basis of carbon on opposite sides of the channel, which - as a source and drain - areas of the unit serve.