Controlled silicon rectifiers, manufacturing processes and development structures

摘要

A method, comprising: forming a common P-well (12) on a buried insulator layer (28b) of a silicon-on-insulator wafer (28) in an upper silicon thin-film of the silicon-on-insulator wafer (28c); and forming a plurality of controlled silicon rectifiers (10) in the common P-well such that N + diffusion cathodes (20) of each of the plurality of controlled silicon rectifiers are coupled together through the common P-well, forming the A plurality of the controlled silicon rectifiers includes forming N-wells (14) surrounded by the common P-well in the upper silicon thin film such that a corresponding pair of the respective N + diffusion cathodes are on opposite sides of each N-well wherein each N-well has a plurality of P + diffusion anodes (16) of each N-well and an N-well contact (18) of each N-well, forming P-well contacts (22) in the common one P-well; and forming a P + diffusion structure (26) in the common P-well, the P + diffusion structure connecting each of the P-well contacts, the P + diffusion structure each N-well and the corresponding pair of N + diffusion cathodes to the opposite Sides of each N-tub surrounds.