...
机译:以场注入为主体束缚层的高保持电压分段堆叠可控硅结构
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan;
Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan;
Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan;
Himax Technol Inc, Hsinchu 30071, Taiwan;
Himax Technol Inc, Hsinchu 30071, Taiwan;
Himax Technol Inc, Hsinchu 30071, Taiwan;
Himax Technol Inc, Hsinchu 30071, Taiwan;
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan;
机译:具有高保持电压的SCR堆叠结构,用于高压功率钳位
机译:用于高压应用的堆叠式低压场氧化物设备的人体模型和机器模型ESD鲁棒性研究
机译:采用环电阻触发技术的高保持电压SCR-LDMOS堆叠结构
机译:低压有机场效应晶体管光子存储器,具有溶液加工阻塞介电层和光敏电荷捕获层
机译:通过聚焦离子束注入和银金属化与薄膜硅化物层的集成形成纳米结构的硅化物。
机译:退火条件对交替La2O3 / Al2O3多层堆叠结构平带电压的影响
机译:si上的增强型金属 - 绝缘体 - 半导体GaN / alInN / GaN异质结构场效应晶体管,阈值电压为+ 3.0V,阻断电压高于1000V